Patent · US Active

Cascode transistor device

US11183586B2 · kind B2 · utility

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15Claims

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Assignee

XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD. · CN

Inventors

Jian Yang · Palo Alto, US
Chih-hung Yen · Bloomfield Hills, US
Bin Li · Beijing, CN

Key dates

Filing date	Dec 26, 2019
Grant date	Nov 23, 2021
Priority date	—
Expiry date	May 19, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/117
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A cascode transistor device includes a semiconductor substrate, and a first and a second compound semiconductor transistors. The first compound semiconductor transistor includes a first n-type doping layer, a first p-type doping layer and a second n-type doping layer sequentially disposed on the semiconductor substrate. The second compound semiconductor transistor includes a third n-type doping layer, a second p-type doping layer and a fourth n-type doping layer sequentially disposed on the second n-type doping layer. Each of these doping layers is formed with an exposed metal contact. The exposed metal contact on the second n-type doping layer is electrically connected to the exposed metal contact on the third n-type doping layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.