Photoelectric detector, preparation method thereof, display panel and display device

US11183610B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Chao Li · Zhengzhou, CN
• Jianhua Du · Beijing, CN
• Feng Guan · Beijing, CN
• Yupeng Gao · Beijing, CN
• Zhaohui Qiang · Beijing, CN
• Zhi Wang · Beijing, CN
• Yang LYU · Shanghai, CN
• Chao Luo · Tangshan City, CN

Key dates

• Filing date: Jun 23, 2020
• Grant date: Nov 23, 2021
• Expiry date: Jun 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/00

Abstract

The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.