Patent · US Active

Component having a buffer layer and method for producing a component

US11183621B2 · kind B2 · utility

0Cited by

2References

19Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Paola Altieri-Weimar · Regensburg, DE
Ingo Neudecker · Regensburg, DE
Andreas Ploessl · Regensburg, DE
Marcus Zenger · Abensberg, DE

Key dates

Filing date	Jul 19, 2018
Grant date	Nov 23, 2021
Priority date	—
Expiry date	Jul 19, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8514
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A component may include a semiconductor chip, a buffer layer, a connecting layer, and a metal carrier. The semiconductor chip may include a substrate and a semiconductor body arranged thereon. The metal carrier may have a thermal expansion coefficient at least 1.5 times as great as a thermal expansion coefficient of the substrate or of the semiconductor chip. The chip may be fastened on the metal carrier by the connecting layer, and the buffer layer may have a yield stress ranging from 10 MPa. The buffer layer may have a thickness ranging from 2 um to 10 um and adjoin the chip. The substrate and the metal carrier may have a higher yield strength than the buffer layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.