Patent · US Active

Quantum dot light emitting diode and preparation method thereof

US11183657B2 · kind B2 · utility

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18Claims

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Assignee

TCL TECHNOLOGY GROUP CORPORATION · CN

Inventors

Zhurong Liang · Huizhou, CN
Weiran Cao · Longbeilingcun, CN
Jia Liu · Beijing, CN

Key dates

Filing date	Mar 20, 2018
Grant date	Nov 23, 2021
Priority date	—
Expiry date	Mar 20, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10K2102/351
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

The present application provides a Quantum Dot Light Emitting Diode (QDLED), comprising an anode, a p-type graphene layer, a hole injection layer, a quantum dot light-emitting layer and a cathode, the anode and the cathode is oppositely disposed, the quantum dot light-emitting layer is disposed between the anode and the cathode, the p-type graphene layer is disposed between the anode and the quantum dot light-emitting layer, and the hole transport layer is disposed between the p-type graphene layer and the quantum dot light-emitting layer, wherein the p-type graphene layer is made from p-type doped graphene, and the p-type doped graphene is at least one selected from a doped graphene via adsorption and a doped graphene via lattice.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.