Nonvolatile memory device with a monitoring cell in a cell string
US11189354B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2020 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Mar 23, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device capable of minimizing monitoring overhead associated with read disturb is provided. The nonvolatile memory device includes a memory cell array which includes a first cell string comprising a plurality of memory cells connected in series, wherein the plurality of memory cells includes a first monitoring cell, a first memory cell, and a second memory cell, and a row decoder which provides a first read voltage to the first memory cell and a first monitoring voltage to the first monitoring cell when reading the first memory cell among the memory cells and provides the first read voltage to the second memory cell and a second monitoring voltage different from the first monitoring voltage to the first monitoring cell when reading the second memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.