Semiconductor structure and fabrication method thereof

US11189495B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Yafeng Qian · Shanghai, CN
• Ying Li · Shanghai, CN
• Lihua Ding · Shanghai, CN
• Jiaxi Li · Nashua, US
• Wendong LIU · Nanhu, CN

Key dates

• Filing date: Sep 29, 2020
• Grant date: Nov 30, 2021
• Expiry date: Sep 29, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32155
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a to-be-etched layer including a first region; forming a first pattern material layer on the to-be-etched layer; forming a sacrificial layer on the first pattern material layer; forming a first opening in the sacrificial layer over the first region, where the first opening exposes a first portion of the first pattern material layer; forming a first doped region in the first pattern material layer using the sacrificial layer as a mask; forming a second opening in the sacrificial layer over the first region, where the second opening exposes a second portion of the first pattern material layer; and forming a second doped region in the first pattern material layer using the sacrificial layer as a mask, where the second doped region is connected with the first doped region.