Integrated circuit (IC) device
US11189570B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2019 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Nov 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) device includes a line structure including a conductive line formed on a substrate and an insulation capping pattern that covers the conductive line; an insulation spacer covering a sidewall of the line structure; a conductive plug spaced apart from the conductive line in a first horizontal direction with the insulation spacer between the conductive plug and the conductive line; a conductive landing pad arranged on the conductive plug to vertically overlap the conductive plug; and a capping layer including a first portion between the conductive landing pad and the insulation capping pattern, wherein the first portion of the capping layer has a shape in which a width in the first horizontal direction gradually increases as a distance from the substrate increases between the conductive landing pad and the insulation capping pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.