Method for preparing self-aligned surface channel field effect transistor and power device

US11189696B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS · CN

Inventors

• Yuangang Wang · Nanhu, CN
• Yuanjie Lv · Shijiazhuang, CN
• Zhihong Feng · Shijiazhuang, CN
• Cui Yu · Shijiazhuang, CN
• Chuangjie Zhou · Shijiazhuang, CN
• Zezhao He · Shijiazhuang, CN
• Xubo Song · Shijiazhuang, CN
• Shixiong Liang · Sichuan, CN

Key dates

• Filing date: Mar 28, 2019
• Grant date: Nov 30, 2021
• Expiry date: Mar 28, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/882

Abstract

The disclosure provides a method for preparing a self-aligned surface channel field effect transistor, and provides a power device. The method includes the following steps: depositing a first metal mask layer; preparing a first photoresist layer; forming a source area pattern and a drain area pattern; depositing a source metal layer and a drain metal layer on the source area pattern and the drain area pattern; peeling off and removing the first photoresist layer; depositing a second metal mask layer; preparing a second photoresist layer, and forming at least one gate area pattern closer toward the source metal layer by performing exposure and development; removing the first metal mask layer and the second metal mask layer between the source metal layer and the drain metal layer by a wet corrosion; depositing a gate metal layer on the gate area pattern; and peeling off and removing the second photoresist layer.