Silicon carbide semiconductor device and power converter
US11189720B2 · kind B2 · utility
1Cited by
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16Claims
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Key dates
| Filing date | Feb 22, 2018 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Aug 23, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an SiC-MOSFET with a built-in Schottky diode, a bipolar current may be passed in a second well region formed at a terminal part to reduce the breakdown voltage of the terminal part. In the SiC-MOSFET with the built-in Schottky diode, a source electrode forming non-ohmic connection such as Schottky connection with the second well region is provided on the second well region formed below a gate pad in the terminal part. By the absence of ohmic connection between the second well region and the source electrode, reduction in breakdown voltage is suppressed at the terminal part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.