Photodetector comprising dual cells with different thickness of interposing substrates, photodetection device, laser imaging detection and ranging apparatus and method of manufacturing a photodetector
US11189746B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Feb 28, 2018 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Oct 3, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01S7/4868
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.