Multi-quantum well structure and LED device including the same

US11189751B2 · kind B2 · utility

Assignee

• XIAMEN SAN'AN OPTOELECTRONICS CO., LTD. · CN

Inventors

• Han Jiang · Wuhu, CN
• Yung-Ling Lan · Wuhu, CN
• Wen-Pin Huang · Taipei, TW
• Changwei Song · Wuhu, CN
• Li-Cheng Huang · Wuhu, CN
• Feilin Xun · Xiamen, CN
• Chan-Chan Ling · Wuhu, CN
• Chi-Ming Tsai · New Taipei, TW
• Chia-Hung Chang · Xiamen, CN

Key dates

• Filing date: Oct 17, 2019
• Grant date: Nov 30, 2021
• Expiry date: Nov 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N/GaN stack, where 0<x1≤1 and 0≤y1<1, and for the remainder of the potential barrier sub-layers, each of the potential barrier sub-layers is a GaN layer. An LED device including the multi-quantum well structure is also disclosed.