Semiconductor substrate
US11189754B2 · kind B2 · utility
0Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2019 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Jun 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.