Wide voltage trans-impedance amplifier
US11190140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2020 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | May 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/72
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A wide voltage trans-impedance amplifier includes a first P-channel metal oxide semiconductor (PMOS) transistor PM1, a second PMOS transistor PM2, a third PMOS transistor PM3, a fourth PMOS transistor PM4, a fifth PMOS transistor PM5, a first bias voltage VB1, a second bias voltage VB2, a third bias voltage VB3, a first N-channel metal oxide semiconductor (NMOS) transistor NM1, and a second NMOS transistor NM2. A common-gate amplifier detects a change of an input voltage, and a negative feedback is constructed by injecting a current into a current mirror to achieve a low input impedance. The trans-impedance amplifier uses a common-gate amplifier to monitor an input voltage and uses a current mirror to perform the transconductance enhancement on an input transistor, while ensuring a relatively high loop gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.