Advanced gate drivers for silicon carbide bipolar junction transistors
US11190179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2020 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Jul 13, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate driver circuit comprises a sensor, an amplifier, a regulator and a gate driver. The sensor is configured to sense a collector-emitter voltage and includes a first resistor and a second resistor connected in series, a high voltage diode connected between the series connected first and second resistors and a first capacitor connected parallel to the second resistor. The amplifier is configured to amplify a sensor output voltage and includes a non-inverting operational amplifier controlled by means of a plurality of resistors, a voltage follower connected to an output terminal of the non-inverting operational amplifier through a first diode and a third resistor connected across the first diode and the voltage follower. The regulator is configured to regulate a regulator output voltage based on an amplifier voltage. The gate driver is configured to connect/disconnect the regulator output voltage to the base terminal of the BJT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.