Temperature variation compensation
US11194523B2 · kind B2 · utility
1Cited by
8References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 24, 2020 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Jan 24, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (VT) of a memory cell under a first parameter at a read temperature and measure a second VT of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A VT correction term for the memory cell is determined based upon the first VT measurement and the second VT measurement. A read VT of the memory cell is adjusted by using the VT correction term.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.