Patent · US Active

Multilayer varistor having a field-optimized microstructure

US11195643B2 · kind B2 · utility

1Cited by
6References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 2, 2019
Grant dateDec 7, 2021
Priority date
Expiry dateJul 2, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01C7/18
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

In an embodiment a multilayer varistor includes a ceramic body made from a varistor material, wherein the ceramic body includes a plurality of inner electrodes, first regions and second regions, wherein the varistor material in the first regions has a first average grain size DA, wherein the varistor material in the second regions has a second average grain size DB, and wherein DA<DB.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.