Multi-diode semiconductor device and method of operation therefor
US11195825B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jan 22, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Aug 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/819
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device arrangement and a method of operating a semiconductor device arrangement. The semiconductor device can be arranged for bidirectional operation. The semiconductor device arrangement can comprise: a field effect transistor comprising first and second input terminals; a control terminal; a first diode connected between the first terminal and the control terminal; and a second diode connected between the second terminal and the control terminal; wherein the first terminal and the second terminal are configured and arranged to be connected to respective signal lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.