Integrated circuit and method for manufacturing the same
US11195841B2 · kind B2 · utility
0Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2020 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Jan 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method for manufacturing an integrated circuit is provided. The method includes depositing a floating gate electrode film over a semiconductor substrate; patterning the floating gate electrode film into at least one floating gate electrode having at least one opening therein; depositing a control gate electrode film over the semiconductor substrate to overfill the at least one opening of the floating gate electrode; and patterning the control gate electrode film into at least one control gate electrode over the floating gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.