Semiconductor device with at least a portion of gate electrode enclosed by an insulating structure and method of fabricating the same
US11195950B2 · kind B2 · utility
1Cited by
11References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Dec 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include active patterns extended in a first direction and spaced apart from each other in the first direction, a device isolation layer defining the active patterns, an insulating structure provided between the active patterns and between the device isolation layer, and a gate structure disposed on the insulating structure and extended in a second direction crossing the first direction. The gate structure may include an upper portion and a lower portion. The lower portion of the gate structure may be enclosed by the insulating structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.