Thin-film transistor, display device including the same, and method of manufacturing the same
US11195956B2 · kind B2 · utility
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4References
21Claims
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Key dates
| Filing date | Jul 3, 2019 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Jul 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
Abstract
A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.