High radiation detection performance from photoactive semiconductor single crystals
US11195967B2 · kind B2 · utility
1Cited by
1References
21Claims
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Key dates
| Filing date | Sep 6, 2018 |
| Grant date | Dec 7, 2021 |
| Priority date | — |
| Expiry date | Sep 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.