Patent · US Active

Optoelectronic component

US11195976B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 29, 2018
Grant dateDec 7, 2021
Priority date
Expiry dateMar 29, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8506

Abstract

An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.