Photosensitive pixel structure with increased light absorption and photosensitive implant
US11197993B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2016 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Oct 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
The present invention refers to a photosensitive pixel structure (10) comprising a substrate (15) with a front surface and a back surface, wherein at least one photosensitive diode (12, 12′) is provided on one of the surfaces of the substrate (15). A first material layer (30) is provided at least partially on the back surface of the substrate (15), wherein the material layer (30) comprises a reflective layer, in order to increase a reflectivity at the back surface of the substrate. Further, the present invention refers to an array (1) and an implant comprising such a photosensitive pixel structure (10), as well as to a method to produce the pixel structure (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.