Semiconductor device, inverter circuit, drive device, vehicle, and elevator each having a threshold-voltage-increasing portion in silicon carbide layer

US11201223B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Tatsuo Shimizu · Shinagawa, JP
• Ryosuke Iijima · Setagaya, JP

Key dates

• Filing date: Feb 13, 2020
• Grant date: Dec 14, 2021
• Expiry date: Apr 26, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/2527

Abstract

A semiconductor device according to an embodiment includes a gate electrode, a gate insulating layer, and a silicon carbide layer. The silicon carbide layer includes at least one first element selected from the group consisting of S, Se, Te, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. The first distance between a first position and an interface between the gate insulating layer and the silicon carbide layer is equal to or less than 20 nm, and the first position is a position where a concentration of the first element is maximized. The second distance between a second position and the interface is equal to or less than 20 nm, second position is a position where a concentration of the first element is 1/10 of a concentration of the first element at the first position, and the second position is farther from the interface than the first position.