Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same
US11201248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2020 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Feb 21, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13685
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.