Schottky barrier diode and method for manufacturing the same
US11201250B2 · kind B2 · utility
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16References
9Claims
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Key dates
| Filing date | Apr 14, 2020 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Apr 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky barrier diode includes a substrate, a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a metal layer formed on the second semiconductor layer to form a Schottky barrier, wherein the first semiconductor layer and the second semiconductor layer are formed of different materials, and a conduction band offset between the first semiconductor layer and the second semiconductor layer is less than a set value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.