High speed photo detectors with reduced aperture metal contact and method therefor
US11201251B2 · kind B2 · utility
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3References
14Claims
0Family size
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Key dates
| Filing date | Feb 5, 2020 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | Feb 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/241
Abstract
A photodiode has a substrate. A mesa structure is formed on the substrate, wherein the mesa structure has an n region containing an n type dopant formed on the substrate, an intermediate region positioned on the n region and a p region formed on the intermediate region and containing a p type dopant. A contact is formed on a top surface of the mesa and attached to the p region. The contact is formed around an outer perimeter of the mesa. The mesa has a diameter of 30 um or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.