(GaMe)2O3 ternary alloy material, its preparation method and application in solar-blind ultraviolet photodetector
US11201254B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2020 |
| Grant date | Dec 14, 2021 |
| Priority date | — |
| Expiry date | May 22, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/6567
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A (GaMe)2O3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe)2O3 ternary alloy material of the present invention is formed by solid solution of Ga2O3 and Me2O3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe)2O3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me2O3 is higher than that of Ga2O3, and Ga3+ ions in Ga2O3 are partially replaced by Me3+ ions to obtain a higher band gap (GaMe)2O3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.