Silicon-based lithium niobate film electro-optic modulator array and integration method thereof
US11204535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2019 |
| Grant date | Dec 21, 2021 |
| Priority date | — |
| Expiry date | Jan 30, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/217
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Integration method of a large-scale silicon-based lithium niobate film electro-optic modulator array. By using the method, the difficulty of a fabrication process of a lithium niobate crystal layer is reduced, requirements on precision of bonding lithium niobate and silicon is reduced, and fabrication and bonding of the large-scale array lithium niobate crystal layer can be completed at one time, so that production efficiency of the silicon-based lithium niobate film electro-optic modulator array is greatly improved; through design and optimization of the structure of the silicon crystal layers, light can be naturally alternated and mutually transmitted in silicon waveguides and lithium niobate waveguides, and a high-performance electro-optic modulation effect of the lithium niobate film is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.