EUV photo masks and manufacturing method thereof
US11204545B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2020 |
| Grant date | Dec 21, 2021 |
| Priority date | — |
| Expiry date | May 4, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/58
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.