Patent · US Active

Optoelectronic component

US11205641B2 · kind B2 · utility

0Cited by
1References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 20, 2018
Grant dateDec 21, 2021
Priority date
Expiry dateSep 20, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An optoelectronic component may include four semiconductor chips arranged on a substrate. A first semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 610 to about 650 nm during operation. A second semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 450 to about 475 nm during operation. A third semiconductor chip may be configured to emit electromagnetic radiation with color space coordinates of 0.3231±0.005 and 0.5408±0.005 in the CIE color space during operation. A fourth semiconductor chip may emit electromagnetic radiation having color space coordinates of 0.5638±0.005 and 0.4113±0.005 in the CIE color space during operation. The third and fourth semiconductor chips may have a conversion layer configured to convert a wavelength of the electromagnetic radiation emitted by the active region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.