Thin film transistor and manufacturing method thereof, gate driving circuit, display substrate and display device
US11205726B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 31, 2020 |
| Grant date | Dec 21, 2021 |
| Priority date | — |
| Expiry date | Mar 31, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2300/0426
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a thin film transistor, including: an active layer, a source and a drain electrically coupled with the active layer, and a plurality of doped layers located between the source and the active layer and between the drain and the active layer, a resistance of one of the plurality of doped layers farthest away from the active layer is smaller than that of any other doped layer. The disclosure further provides a gate driving circuit, a display substrate and a display device. With the present disclosure, current loss of a current passing through the doped layers of the thin film transistor is reduced, on-state current of the thin film transistor is improved and a situation that output signals of the thin film transistor are insufficient is avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.