Organometallic precursor compound for vapor deposition for forming oxide thin film and method for manufacturing same
US11208723B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Sep 30, 2016 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Dec 18, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An organometallic compound, which enables thin-film deposition through vapor deposition, and particularly to a Co or Fe precursor, which is suitable for use in atomic layer deposition or chemical vapor deposition, and a method of preparing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.