Patent · US Active

Infrared device

US11209353B2 · kind B2 · utility

0Cited by

2References

20Claims

0Family size

Assignee

Sensirion AG · CH

Inventors

Nicolas Zäch · Männedorf, CH
Martin Winger · Männedorf, CH
Nicolas Daix · Männedorf, CH
Sebastian Raab · Germering, DE
Thomas UEHLINGER · Kehlhof, CH

Key dates

Filing date	Sep 28, 2018
Grant date	Dec 28, 2021
Priority date	—
Expiry date	Sep 28, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10F71/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An infrared device comprises a substrate. A configuration for emitting infrared radiation is supported by the substrate. The configuration comprises an electrically conducting layer arrangement of less than 50 nm thickness between dielectric layers. In addition, a heater arranged for heating the configuration to emit the infrared radiation is supported by the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.