Semiconductor device and method of manufacturing the same
US11211294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2019 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Jul 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a device isolation layer provided on a substrate, the device isolation layer defining first and second sub-active patterns, first and second gate electrodes crossing the first and second sub-active patterns, respectively, and an isolation structure provided on the device isolation layer between the first and second sub-active patterns. The first and second sub-active patterns extend in a first direction and are spaced apart from each other in the first direction. The device isolation layer includes a diffusion break region disposed between the first and second sub-active patterns. The isolation structure covers a top surface of the diffusion break region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.