Method for processing an ultra-high density space interconnect lead under light source guidance
US11211357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Sep 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for processing an ultra-high density interconnect wire under light source guidance, comprising preparing a photo-thermal response conductive paste, and putting it into an air pressure injector; driving the air pressure injector; the air pressure injector extrudes the photo-thermal response conductive paste, so that the photo-thermal response conductive paste is connected with the first chip to form an interconnection wire; stopping extruding the photo-thermal response conductive paste, and driving the air pressure injector to pull off the interconnection wire; a linear light source emits light and irradiates on the interconnection wire to bend to an upper side of a second chip bonding pad; an extrusion mechanism presses a free end of the interconnection wire on the second chip bonding pad; the first chip and the second chip are subjected to glue dripping encapsulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.