Semiconductor device having through silicon vias and manufacturing method thereof
US11211363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | May 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the semiconductor device, a semiconductor substrate has first and second surfaces. A circuitry layer is formed over the first surface and a first insulating layer is further formed over the circuitry layer. A second insulating layer including a first insulating element is formed over the second surface. A third insulating layer including a second insulating element different from the first insulating element of the second insulating layer is formed over the second surface with an intervention of the second insulating layer therebetween. A penetration electrode penetrates through the semiconductor substrate, the circuitry layer, the first insulating layer, the second insulating layer and the third insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.