Switching element, variable resistance memory device, and method of manufacturing the switching element
US11211427B2 · kind B2 · utility
1Cited by
6References
10Claims
0Family size
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Key dates
| Filing date | Apr 17, 2019 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Jan 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.