Semiconductor device
US11211447B2 · kind B2 · utility
2Cited by
19References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Nov 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.