Semiconductor devices including source/drain regions having antimony doped layer
US11211454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Mar 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.