Semiconductor device and memory device
US11211461B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2019 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Nov 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/875
Abstract
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.