Method of fabricating trimmed fin and fin structure
US11211479B2 · kind B2 · utility
0Cited by
18References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 9, 2018 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | May 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a trimmed fin includes: forming a preliminary fin including silicon and germanium protruding from a substrate, in which the preliminary fin has a first germanium concentration at a top surface of the preliminary fin and a second germanium concentration at a position beneath the top surface of the preliminary fin, and the first germanium concentration is less than the second germanium concentration; oxidizing an exposed surface of the preliminary fin to form a trimmed fin covered by an oxide layer; and removing the oxide layer to obtain the trimmed fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.