III-V semiconductor device
US11211481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Mar 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
A heterojunction device, includes a substrate; a III-nitride semiconductor region located longitudinally above or over the substrate and including a heterojunction having a two-dimensional carrier gas; first and second laterally spaced terminals operatively connected to the semiconductor; a gate structure of first conductivity type located above or longitudinally over the semiconductor region and laterally spaced between the first and second terminals; a control gate terminal operatively connected to the gate structure, a potential applied to the control gate terminal modulates and controls a current flow through the carrier gas between the terminals, the carrier gas being a second conductivity type; an injector of carriers of the first conductivity type laterally spaced away from the second terminal; and a floating contact layer located over the carrier gas and laterally spaced away from the second terminal and operatively connected to the injector and the semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.