Self-bypass diode function for gallium arsenide photovoltaic devices
US11211506B2 · kind B2 · utility
0Cited by
20References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2017 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Dec 5, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.