Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
US11211514B2 · kind B2 · utility
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29Claims
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Key dates
| Filing date | Mar 5, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Apr 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/12485
Abstract
Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.