Method for manufacturing solar cell
US11211519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2020 |
| Grant date | Dec 28, 2021 |
| Priority date | — |
| Expiry date | Aug 21, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution. The linear expansion coefficients of the semiconductor substrate and the lift-off layer satisfy the relational expression: the linear expansion coefficient of the lift-off layer <the linear expansion coefficient of the semiconductor substrate, and the forming of the second semiconductor layer or the removing of the second semiconductor layer is performed at a temperature higher than the temperature in the forming of the lift-off layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.