Planar quantum structures utilizing quantum particle tunneling through local depleted well
US11214484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Jan 5, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/44
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Novel and useful quantum structures having a continuous well with control gates that control a local depletion region to form quantum dots. Local depleted well tunneling is used to control quantum operations to implement quantum computing circuits. Qubits are realized by modulating gate potential to control tunneling through local depleted region between two or more sections of the well. Complex structures with a higher number of qdots per continuous well and a larger number of wells are fabricated. Both planar and 3D FinFET semiconductor processes are used to build well to gate and well to well tunneling quantum structures. Combining a number of elementary quantum structure, a quantum computing machine is realized. An interface device provides an interface between classic circuitry and quantum circuitry by permitting tunneling of a single quantum particle from the classic side to the quantum side of the device. Detection interface devices detect the presence or absence of a particle destructively or nondestructively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.