Hardmask composition, hardmask layer and method of forming patterns
US11214678B2 · kind B2 · utility
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2References
18Claims
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Key dates
| Filing date | Jun 28, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Dec 9, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L2203/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hardmask composition, a hardmask layer, and a method of forming patterns, the composition including a solvent; and a polymer that includes a substituted biphenylene structural unit, wherein one phenylene of the biphenylene of the substituted biphenylene structural unit is substituted with at least one of a hydroxy-substituted C6 to C30 aryl group, and a hydroxy-substituted C3 to C30 heteroaryl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.