Chemical vapor deposition reactor to grow diamond film by microwave plasma chemical vapor deposition
US11214871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2019 |
| Grant date | Jan 4, 2022 |
| Priority date | — |
| Expiry date | Oct 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32642
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.