Storage device and method for manufacturing the same

US11216393B2 · kind B2 · utility

Assignee

• LONTIUM SEMICONDUCTOR CORPORATION · CN

Inventors

• Xianghao Guo · Meekrap-oord, CN
• Chuanxing Liu · Meekrap-oord, CN
• Feng Chen · Meekrap-oord, CN
• Hongfeng Xia · Meekrap-oord, CN
• Jin Su · Daguantang, CN
• Haowei Guan · Meekrap-oord, CN
• Diansheng Ren · Daguantang, CN
• Lianliang Tai · Daguantang, CN
• Dafeng Zhou · Meekrap-oord, CN
• Guangren Li · Meekrap-oord, CN
• Changqian Xie · Meekrap-oord, CN

Key dates

• Filing date: May 12, 2020
• Grant date: Jan 4, 2022
• Expiry date: May 12, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A conversion apparatus, a storage device and a method for manufacturing the same are provided. The storage device may include a DDR storage layer, a DDR interface layer, a conversion logic circuit layer, and a peripheral interface layer. The peripheral interface layer may include a GDDR interface layer or a PCIe interface layer. The conversion logic circuit layer may process, by using DDR storage logic, data obtained through the peripheral interface layer and transfer processed data to the DDR interface layer, or process, by using GDDR storage logic, data obtained through the DDR interface layer and transfer processed data to the peripheral interface Layer. The DDR storage layer may be connected to the DDR interface layer, so that the conversion logic circuit layer can convert the storage logic of the data from DDR to GDDR or from GDDR to DDR.